| 摘要 |
A power semiconductor device comprises a conductive gate, provided in an upper part of a trench (11) formed in a semiconductor substrate (1), and a conductive field plate, extending in the trench, parallel to the conductive gate, to a depth greater that the conductive gate. The field plate is insulated from the walls and bottom of the trench by a field plate insulating layer that is thicker than the gate insulating layer. In one embodiment, the field plate is insulated within the trench from the gate. Impurity doped regions of a first conductivity type are provided at the surface of the substrate adjacent the first and second sides of the trench and form source and drain regions, and a body region (7) of second conductivity type is formed under the source region on the first side of the trench (11). The conductive gate is insulated from the body region (7) by a gate insulating layer. A method of making the semiconductor device is compatible with conventional CMOS processes.
|
