| 摘要 |
Provided is a GaN based field effect transistor that is capable of normally-off operation, high breakdown voltage and large current. A body electrode 8 is provided on the bottom surface or the top surface of the field effect transistor. When the body electrode 8 is provided on the bottom surface, a p-type GaN layer 4 is provided on a p-type Si substrate 2 via a buffer layer 3 comprising a plurality of AlN layers 31 and GaN layers 32, with the top layer of that buffer layer 3 being a thin AlN layer 31, and the body electrode 8 being formed on the bottom surface of the p-type Si substrate. When the body electrode 8 is provided on the top surface, a p-type GaN layer 4 is provided on a sapphire substrate 21 and an AlGaN layer 13 is provided on the area under the source electrode 5 and drain electrode 6, with the body electrode 8 being provided on top of the AlGaN layer 13. Holes 20 that are generated by an avalanche phenomenon run through the body electrode 8.
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