发明名称 NONVOLATILE MEMORY DEVICE, SYSTEM, AND PROGRAMMING METHOD
摘要 A method of programming a nonvolatile memory device comprises selectively programming memory cells from a first state to a second state based on lower bit data, selectively programming the memory cells from the second state to an intermediate state corresponding to the lower bit data, and selectively programming the memory cells from the intermediate state to a third or fourth state based on upper bit data.
申请公布号 US2010246260(A1) 申请公布日期 2010.09.30
申请号 US20100722718 申请日期 2010.03.12
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KANG DONGKU
分类号 G11C16/04 主分类号 G11C16/04
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