| 摘要 |
<p>An oxide film on the surface of a silicon substrate (5) is removed by introducing a processing gas, a silicon layer is etched by allowing F radicals to act on the surface of the silicon substrate, subsequently, (NH4)2SiF6 is produced by introducing NH3 gas, N2 gas, and NF3 gas and allowing NHxFy to act on the oxide surface of the silicon substrate (5), and removing bi-products (SiOF, SiOH) on the surface of the silicon substrate (5) by sublimating (NH4)2SiF6.</p> |
