| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device reducing influence of noise. <P>SOLUTION: This semiconductor device includes: wires or electrodes respectively formed on the front surface side and the back surface side of a semiconductor substrate; penetration electrodes 35 formed to penetrate both the front and back surfaces of the semiconductor substrate for electrically connecting the wires or electrodes formed on the front surface side of the semiconductor substrate to the wires or electrodes formed on the back surface side of the semiconductor substrate; and guard ring wiring 51 formed to penetrate both the front and back surfaces of the semiconductor substrate and surround the penetration electrodes and connected to the ground potential. <P>COPYRIGHT: (C)2010,JPO&INPIT |
