| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To solve a problem wherein since a structure of a conventional apparatus may react sluggishly to exhibit the end point of an etching process, it is difficult to detect the end point. <P>SOLUTION: This apparatus 10 for chemically etching a workpiece includes: a chamber 11 having a pumping port 16 for receiving a process gas and extracting exhaust gas; and a workpiece support 12 arranged in the chamber 11 upstream of the pumping port 16. The chamber 11 further includes a sub-chamber 15 arranged upstream of the pumping port and downstream of the workpiece support, and the sub-chamber 15 includes a window 19 and an excitation source, adjacent the window, for generating plasma in a sample of the exhaust gas to generate an optical emission which can be monitored through the window 19. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
