| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor apparatus having a source-drain region in which a semiconductor layer that generates sufficient distortion in a channel region is buried, without reducing short channel characteristics, and to provide a method of manufacturing the same. SOLUTION: A semiconductor apparatus includes: a gate electrode 13 formed on a main surface of an N-type silicon substrate 11 via a gate insulation film; source/drain regions 17a and 17b having a structure in which first semiconductor layers 15a and 15b formed so as to sandwich a channel region 14 formed below the gate electrode 13, and which includes germanium for giving distortion to the channel region 14 and carbon for suppressing P-type impurity boron and diffusion of boron, and second semiconductor layers 16a and 16b containing germanium and boron, are laminated in this order; and extension regions 18a and 18b adjacent to the channel region 14 from the side surface of the gate electrode 13 of the second semiconductor layers 16a and 16b. COPYRIGHT: (C)2010,JPO&INPIT
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