发明名称 |
NONVOLATILE SPLIT GATE MEMORY CELL HAVING OXIDE GROWTH |
摘要 |
A split gate nonvolatile memory cell on a semiconductor layer is made by forming a gate dielectric over the semiconductor layer. A first layer of gate material is deposited over the gate dielectric. The first layer of gate material is etched to remove a portion of the first layer of gate material over a first portion of the semiconductor layer and to leave a select gate portion having a sidewall adjacent to the first portion. A treatment is applied over the semiconductor layer to reduce a relative oxide growth rate of the sidewall to the first portion. Oxide is grown on the sidewall to form a first oxide on the sidewall and on the first portion to form a second oxide on the first portion after the applying the treatment. A charge storage layer is formed over the first oxide and along the second oxide. A control gate is formed over the second oxide and adjacent to the sidewall.
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申请公布号 |
US2010244120(A1) |
申请公布日期 |
2010.09.30 |
申请号 |
US20090413987 |
申请日期 |
2009.03.30 |
申请人 |
KANG SUNG-TAEG;WINSTEAD BRIAN A |
发明人 |
KANG SUNG-TAEG;WINSTEAD BRIAN A. |
分类号 |
H01L29/792;H01L21/336 |
主分类号 |
H01L29/792 |
代理机构 |
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地址 |
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