METHOD OF DRIVING RESISTANCE-CHANGE ELEMENT, AND NON-VOLATILE MEMORY DEVICE

摘要

A method of driving a resistance-change element, comprising: a writing process of applying a write voltage pulse of a first polarity to a metal oxide layer (3) to change the resistance state of the metal oxide layer (3) from high to low so as to set a write state; an erasing process of applying an erase voltage pulse of a second polarity, different from the first polarity, to the metal oxide layer (3) to change the resistance state of the metal oxide layer (3) from low to high so as to set an erase state; and an initial process of applying an initial voltage pulse of the second polarity to the metal oxide layer (3), before the first time the writing process is performed, so as to change the resistance value of the initial state of the metal oxide (3); wherein in cases when the resistance value of the initial state of the metal oxide layer (3) is R0, the resistance value of the write state is RL, the resistance value of the erase state is RH, the voltage value of the initial voltage pulse is V0, the voltage value of the write voltage is Vw, and the voltage value of the erase voltage pulse is Ve, R0>RH>RL and |V0|>|Ve|=|Vw| are satisfied.