| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a high-quality nitride crystal of a group 13 metal at low pressure or normal pressure, and to provide a method for manufacturing a semiconductor device by using the method. SOLUTION: The method for producing a nitride crystal of a group 13 metal includes reacting an ion source containing a group 13 metal and an ion source containing nitrogen preferably in a fused salt 2. In the method, as the fused salt 2, at least one of Li-halide or Na-halide is used to form at least one of Li or Na. COPYRIGHT: (C)2010,JPO&INPIT |
