| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology that reduces particle contamination when carrying out silicon film formation, for example, the epitaxial growth of silicon on a substrate by using a vertical heat processing device. SOLUTION: A silicon film 3 is precoated in a reaction tube 1 and a wafer boat 21 by silane based gas. Next, a natural oxide film on a surface of a wafer W is removed by mixed gas (HF+NH<SB>3</SB>) after carrying the wafer W into the reaction tube 1, and then, the epitaxial growth is carried out for the wafer W by using the silane based gas. The height position of an aperture end 14a of a third injector 14 for supplying the mixed gas is determined so as to be at a position upper than the silicon film precoated in the reaction tube 1. This allows the reaction tube 1 to be etched by the mixed gas and prevents particles from being generated. COPYRIGHT: (C)2010,JPO&INPIT |
