| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device selectively forming an impurity layer immediately below an element isolation structure. SOLUTION: The method of manufacturing the semiconductor device 10 includes the steps of: forming a trench 26 on a P-type silicon substrate 14 formed with a silicon oxide film 18 and a silicon nitride film 20; expanding the trench 26 toward element regions Ae1, Ae2 to form a trench 16 by isotropic side etching; selectively forming a channel stopper layer 15 at the center part of a bottom part 16A of the trench 16 by implanting impurity ions through an opening 24 formed on the silicon oxide film 18 and the silicon nitride film 20; and removing the silicon oxide film 18 and the silicon nitride film 20 by burying the trench 16 by NSG 32 and smoothing it. COPYRIGHT: (C)2010,JPO&INPIT |
