| 摘要 |
PROBLEM TO BE SOLVED: To provide methods for making a dielectric film containing silicon. SOLUTION: Herein are described methods of making dielectric films containing silicon, such as, but not limited to, silicon oxide, silicon oxycarbide, silicon carbide, and combinations thereof, that exhibit at least one of the following characteristics: low wet etch resistance, a dielectric constant of 6.0 or below, and/or resistance against a high-temperature rapid thermal anneal process. Also, herein are disclosed methods of forming dielectric films or coatings on an object to be processed, such as a semiconductor wafer. COPYRIGHT: (C)2010,JPO&INPIT |
