发明名称 |
INTEGRATED SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
An integrated semiconductor device and method of manufacturing the same includes leaving one part of a semiconductor layer so that an inclined surface is formed on a trench when forming the trench on a SOI wafer. A thick silicon oxide film (second insulation film) is formed along this incline surface. This thick silicon oxide film prevents oxygen entering a boundary surface between an insulation layer and the semiconductor layer of the SOI wafer within the trench.
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申请公布号 |
US2010244183(A1) |
申请公布日期 |
2010.09.30 |
申请号 |
US20100695354 |
申请日期 |
2010.01.28 |
申请人 |
SANKEN ELECTRIC CO., LTD. |
发明人 |
AOKI HIRONORI;KIKKAWA EIICHI |
分类号 |
H01L29/06;H01L21/762 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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