| 摘要 |
Manufacture of a silicon carbide crystal comprises epitaxial growth of a SiC crystal on a substrate at >= 1400[deg]C under normal or reduced pressure by supplying a raw material gas containing a carbon source and a silicon source in a carrier gas to a SiC single crystal substrate having hollow defects called micro-pipes. The atomic ratio (C/Si) of carbon and silicon atoms in the raw material gas is adjusted so the crystal growth rate becomes the carbon atom supply rate-determining. Many layers of SiC crystal are laminated by epitaxial growth. The hollow defect which exists in the substrate is degraded into the dislocation which does not accompany many hollows of small Burger's vector. The hollow defects in the substrate do not continue in the SiC crystal surface. Independent claims are also included for: (1) a SiC crystal; (2) a SiC single crystal film formed on a SiC single crystal substrate; (3) a SiC semiconductor comprising a SiC single crystal film containing a dopant of controlled concentration; (4) a SiC single crystal substrate including the SiC single crystal film; (5) an electrical device including the substrate and an electrical element; and (6) the manufacture of a SiC bulk crystal using the SiC crystal as a seed crystal. |
