发明名称 |
SILICON ETCHING LIQUID AND ETCHING METHOD |
摘要 |
A silicon etching liquid characterized by anisotropically dissolving monocrystalline silicon therein by using an aqueous solution containing a quaternary ammonium hydroxide and an aminoguanidine salt and an etching method of silicon using the instant etching liquid are an etching liquid and an etching method enabling one to perform processing at a high etching rate in etching processing of silicon, particularly in etching processing of silicon in a manufacturing process of MEMS parts or semiconductor devices.
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申请公布号 |
US2010248495(A1) |
申请公布日期 |
2010.09.30 |
申请号 |
US20080681247 |
申请日期 |
2008.09.22 |
申请人 |
MITSUBISHI GAS CHEMINCAL COMPANY, INC. |
发明人 |
YAGUCHI KAZUYOSHI;SOTOAKA RYUJI |
分类号 |
H01L21/306;C09K13/00 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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