| 发明名称 |
NITRIDE SEMICONDUCTOR DEVICE |
| 摘要 |
On a processed substrate having an engraved region as a depressed portion formed thereon, a nitride semiconductor thin film is laid. The sectional area occupied by the nitride semiconductor thin film filling the depressed portion is 0.8 times the sectional area of the depressed portion or less.
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| 申请公布号 |
US2010244046(A1) |
申请公布日期 |
2010.09.30 |
| 申请号 |
US20100813245 |
申请日期 |
2010.06.10 |
| 申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
KAMIKAWA TAKESHI;YAMADA EIJI;ARAKI MASAHIRO |
| 分类号 |
H01L33/30;H01L21/00;H01L33/00;H01L33/20;H01L33/24;H01L33/32;H01S5/02;H01S5/22;H01S5/223;H01S5/323 |
主分类号 |
H01L33/30 |
| 代理机构 |
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