发明名称 VAPOR DEPOSITION APPARATUS AND VAPOR DEPOSITION METHOD
摘要 <p>Provided is a vapor deposition apparatus, wherein a shower head, which is provided with a plurality of gas jetting holes, and a shower plate, which is disposed to face the shower head and is provided with a plurality of plate holes, are provided in a reacting furnace, and a gas is supplied from the shower head to the inside of a deposition chamber containing a substrate to be processed through the gas jetting holes of the shower head and the plate holes of the shower plate, and a film is formed on the substrate to be processed. A region having a low heat conductivity is formed on a surface, which is outside of a region heated by a substrate heater of a substrate holding member, faces the substrate holding member and has the shower plate disposed thereon close to the shower head. Thus, the vapor deposition apparatus and a vapor deposition method, wherein generation of the nonuniform flow of the supplied reaction gas is suppressed by preventing the gas jetting holes of the shower head from being covered and film uniformity and film repeatability on the substrate to be processed are ensured, are provided.</p>
申请公布号 WO2010109915(A1) 申请公布日期 2010.09.30
申请号 WO2010JP02208 申请日期 2010.03.26
申请人 SHARP KABUSHIKI KAISHA;OKADA, TOSHINORI;UNEYAMA, KAZUHIRO;SAKAGAMI, HIDEKAZU;TSUBOI, TOSHIKI 发明人 OKADA, TOSHINORI;UNEYAMA, KAZUHIRO;SAKAGAMI, HIDEKAZU;TSUBOI, TOSHIKI
分类号 H01L21/205;C23C16/455 主分类号 H01L21/205
代理机构 代理人
主权项
地址