| 发明名称 |
AMORPHOUS OXIDE THIN FILM |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an amorphous oxide thin film low in electron carrier concentration, and a thin-film transistor using the same. <P>SOLUTION: In this transparent amorphous oxide thin film formed by a vapor-phase film formation method and formed of elements of In, Ga, Zn and O, the composition of the oxide is InGaO<SB>3</SB>(ZnO)<SB>m</SB>(m is a natural number smaller than 6) when crystallized and has a semi-insulating property wherein electron mobility is >1 cm<SP>2</SP>/(V sec) and electron carrier concentration is≤10<SP>16</SP>/cm<SP>3</SP>without adding impurity ions. This thin-film transistor uses the transparent semi-insulating amorphous oxide thin film for a channel layer. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
| 申请公布号 |
JP2010219538(A) |
申请公布日期 |
2010.09.30 |
| 申请号 |
JP20100068708 |
申请日期 |
2010.03.24 |
| 申请人 |
JAPAN SCIENCE & TECHNOLOGY AGENCY |
发明人 |
HOSONO HIDEO;HIRANO MASAHIRO;OTA HIROMICHI;KAMIYA TOSHIO;NOMURA KENJI |
| 分类号 |
H01L29/786;C01G15/00;C23C14/08;G02F1/1345;G02F1/1368;H01L21/363;H01L21/77;H01L21/84 |
主分类号 |
H01L29/786 |
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