| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device which writes data into a memory cell quickly. <P>SOLUTION: The nonvolatile semiconductor memory includes: a memory cell array 1 arranged with a plurality of the memory cells MC to which a plurality of threshold-voltage distribution Er, and A to C are assigned and storing information with a plurality of bits comprising information with a plurality of pages; and a read/write control circuit 3 for writing information into the memory cell MC by applying the voltage to bit lines BL and word lines WL and changing the threshold for the memory cell MC to conduct. The read/write control circuit 3 applies different voltages depending on the information to be written in the bit lines BL0 to BL3 corresponding to a plurality of memory cells MC1-0 to MC1-3 when writing the information into a plurality of the memory cells MC1-0 to MC1-3 connected to the same word line WL1. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
