发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND FILM REMOVING DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device in which a film on a substrate can be removed more securely over a wide range on the substrate. <P>SOLUTION: The substrate 2 having the film 30 formed on a principal surface S is fixed. A first part TA1 of the film 30 is irradiated with first light La having a first focus position Fa, and a second part TB1 of the film 30 is irradiated with second light Lb having a second focus position Fb different from the first focus position Fa in a thickness direction. The first and second parts TA1 and TB1 have parts which do not overlap with each other. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2010219141(A) 申请公布日期 2010.09.30
申请号 JP20090061523 申请日期 2009.03.13
申请人 SHARP CORP 发明人 SHIMADA TAKASHI
分类号 H01L21/302;B23K26/00;B23K26/36;H01L31/042 主分类号 H01L21/302
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