摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device in which a film on a substrate can be removed more securely over a wide range on the substrate. <P>SOLUTION: The substrate 2 having the film 30 formed on a principal surface S is fixed. A first part TA1 of the film 30 is irradiated with first light La having a first focus position Fa, and a second part TB1 of the film 30 is irradiated with second light Lb having a second focus position Fb different from the first focus position Fa in a thickness direction. The first and second parts TA1 and TB1 have parts which do not overlap with each other. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |