| 摘要 |
In a method for producing a bonded wafer by bonding a wafer for active layer and a wafer for support layer and thinning the wafer for active layer according to the invention, oxygen ions are implanted into the wafer for active layer at a state of holding a temperature of the wafer for active layer below 200° C. under a dose of 5×1015 to 5×1016 atoms/cm2, whereby there can be obtained a bonded wafer being excellent in the thickness uniformity after thinning and having a dramatically improved surface roughness.
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