NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE

摘要

The present invention relates to a nitride-based semiconductor light-emitting device, comprising: a substrate; a void inducing groove formed at the substrate; a void inducing pattern embossed on the substrate to form the void inducing groove; a nitride-based semiconductor layer formed on the void inducing pattern; and a three-dimensional void defined by the void inducing groove and the nitride-based semiconductor layer.