METHOD FOR FABRICATING A NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE

摘要

The present invention relates to a method for fabricating a nitride-based semiconductor light-emitting device, comprising the steps of: forming an element unit separation pattern for defining a plurality of light-emitting element unit regions on a substrate; providing a nitride-based semiconductor layer to the plurality of light-emitting element unit regions; and forming independent light-emitting element units.