| 摘要 |
A first wiring layer and a plurality of second wiring layers having a thickness smaller than the first wiring layer are stacked on the semiconductor substrate. An oscillator circuit has an inductor formed by the plurality of second wiring layers. The inductor oscillates at a frequency at which the inductor and a parasitic capacitance of an inverter circuit resonate. A drain of an n-type MISFET and a drain of a p-type MISFET of the inverter circuit are connected to each other, and an output of the inductor is connected to a connection point of those drains. |
