| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To prevent a formation in a region for forming a bump of a non-conductor film. <P>SOLUTION: The semiconductor device includes: a first electrode pad 2a formed on a semiconductor chip 1; a second electrode pad 2b formed on the semiconductor chip 1; and an insulating film 4 including: a first opening 4a being formed on the semiconductor chip 1 and exposing the top face of the first electrode pad 2a; and a second opening 4b exposing the top face of the second electrode pad 2b. The semiconductor device further includes: a first UBM 6a formed on the first electrode pad 2a; a second UBM 6b formed on the second electrode pad 2b; the non-conductor film 7 formed on the first UBM 6a; and the bump 8 formed on the second UBM 6b. A first trench 5X is formed to a part formed between the first electrode pad 2a and the second electrode pad 2b in the insulating film 4, and a step 5 is formed by the first trench 5X positioned on the first electrode pad side. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
