| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which prevents occurrence of a decrease in ON/OFF ratio of a thin film transistor and variance in ON current even when a metal oxide semiconductor layer is used for a channel region of the thin film transistor, and to provide the semiconductor device, an electrooptical device with the semiconductor device, and electronic equipment with the electrooptical device. SOLUTION: When the channel region 7c of the thin film transistor 1c is composed of the oxide semiconductor layer, a semiconductor layer 7a composed of an oxide semiconductor layer having high resistance is used, so there is seldom a problem of a decrease in resistance value of the semiconductor layer 7a under an influence of plasma. Further, an easily oxidizable metal layer 5a is formed in contact with the semiconductor layer 7a, whose resistance value can be decreased through a heating process so as to move oxygen from the semiconductor layer 7a (oxide semiconductor layer) to the easily oxidizable metal layer 5a. COPYRIGHT: (C)2010,JPO&INPIT |
