发明名称 Stacked memory devices
摘要 A stacked memory device may include a substrate, a plurality of memory layers stacked on and above the substrate and divided into a plurality of groups, a plurality of inter-decoders electrically connected to and disposed between the plurality of memory layers in a corresponding one of the plurality of groups, and at least one pre-decoder electrically connected to the plurality of inter-decoders and disposed between the plurality of inter-decoders. A stacked memory device may include a substrate, a plurality of memory layers stacked on and above the substrate and divided into a plurality of groups, a plurality of inter-drivers electrically connected to and disposed between the plurality of memory layers in a corresponding one of the plurality of groups, and at least one pre-driver electrically connected to the plurality of inter-drivers, and disposed between the plurality of inter-drivers.
申请公布号 US2010246234(A1) 申请公布日期 2010.09.30
申请号 US20090654645 申请日期 2009.12.28
申请人 发明人 AHN SEUNG-EON;KIM HO-JUNG;PARK CHUL-WOO;KANG SANG-BEOM;CHOI HYUN-HO
分类号 G11C5/02 主分类号 G11C5/02
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