| 摘要 |
<P>PROBLEM TO BE SOLVED: To lessen stress caused by a thermal expansion coefficient difference between a resin sealing film in a semiconductor device and an insulating board in a wiring board, in a mounting structure of the semiconductor device, in which the semiconductor device having a columnar electrode and the resin sealing film is mounted on the wiring board in a face-down way. <P>SOLUTION: A negative expansion layer 13 formed of either of zirconium tungstate, silicon oxide and manganese nitride, is prepared on a lower surface of the sealing film 12 in the semiconductor device 1. The insulating board 17 in the wiring board 16 is formed of material having smaller thermal expansion coefficient than that of the sealing film 12 consisting of epoxy resin etc., the material for the insulating board being, for example, either of silicon, aluminum nitride, alumina, aramid nonwoven fabric base material epoxy resin. Thereby, the stress caused by the thermal expansion coefficient difference between the sealing film 12 in the semiconductor device 1 and the insulating board 17 in the wiring board 16 can be reduced. <P>COPYRIGHT: (C)2010,JPO&INPIT |
