| 摘要 |
PROBLEM TO BE SOLVED: To facilitate the mass production of a microdevice having a short gate length. SOLUTION: First, an insulation film is formed on the main surface 20a of a semiconductor substrate 20-1 on which a first region 22 and a second region 24 are set. Secondly, a resist pattern 42 covering the insulation film in the first region and exposing the insulation film in the second region is formed on the insulation film. Then, The insulation film in the second region is removed and the insulation film in the first region is left as a first insulation film 32. Subsequently, a metal is stacked on the side surface 32a of the first insulation film to form a metal film 50. Then, a second insulation film is formed on the main surface in the second region-1 of the semiconductor substrate. COPYRIGHT: (C)2010,JPO&INPIT |
