| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device structured to take ohmic contact even with a low-concentration n-type group III nitride semiconductor. SOLUTION: In a sample 1, a non-doped GaN layer 11 and an Si-doped n-GaN layer 12 are formed on a sapphire substrate 10 and on the n-GaN layer 12, two electrodes 14a, 14b comprised of Ti/Al are separately formed via an AlN film 13. The electrode 14a, 14b is a non-alloyed electrode on which alloying using thermal treatment has not been performed. At a side of the n-GaN layer 12 on an interface of the AlN film 13 and the n-GaN layer 12, a two-dimensional (2D) electron gas layer 15 is formed. Through the 2D electron gas layer 15, the electrodes 14a, 14b can be brought into contact with the n-GaN layer 12 with low resistance. COPYRIGHT: (C)2010,JPO&INPIT |
