| 摘要 |
A solid-state image device has a pixel region in which a plurality of unit pixels 306 are two-dimensionally arranged in the horizontal and vertical directions, the unit pixel 306 being made up of a PD 304 and a VCCD 305, wherein a substrate potential setting pixel 307 is formed in the formation part of the PD 304 of at least one of the unit pixels 306 in a pixel region 301. The substrate potential setting pixel 307 and a substrate potential setting electrode 309 provided outside the pixel region 301 are connected to each other via a low-resistance connection electrode 308. Thus it is possible to suppress a potential difference between high-concentration P-type impurity regions in the pixel region, thereby obtaining a high-quality image with no shading while achieving uniformity over the image.
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