发明名称 SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE, METHOD OF DRIVING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a solid-state imaging device with a smaller chip area on which the solid-state imaging device is formed for cost reduction of individual chips, and an electronic apparatus which achieves size reduction by employing the solid-state imaging device. <P>SOLUTION: The solid-state imaging device has a structure in which a first substrate 80 having a photoelectric converter portion PD and a second substrate 81 having a charge storage capacitor portion 61 and multiple MOS transistors are laminated. Connection electrodes (26, 27, 56, 57), which are formed in the first substrate 80 and the second substrate 81 respectively, electrically connect the first substrate 80 and the second substrate 81. This structure allows the solid-state imaging device having a global shutter function to be formed in a smaller area. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010219339(A) 申请公布日期 2010.09.30
申请号 JP20090064956 申请日期 2009.03.17
申请人 SONY CORP 发明人 TAKAHASHI HIROSHI
分类号 H01L27/146;H01L21/3205;H01L21/768;H01L23/52;H01L23/522;H04N5/335;H04N5/369;H04N5/374 主分类号 H01L27/146
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