发明名称 |
EPITAXIAL METHODS AND STRUCTURES FOR REDUCING SURFACE DISLOCATION DENSITY IN SEMICONDUCTOR MATERIALS |
摘要 |
The invention provides methods and structures for reducing surface dislocations of a semiconductor layer, and can be employed during the epitaxial growth of semiconductor structures and layers comprising III-nitride materials. Embodiments involve the formation of a plurality of dislocation pit plugs to prevent propagation of dislocations from an underlying layer of material into a following semiconductor layer of material.
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申请公布号 |
US2010244197(A1) |
申请公布日期 |
2010.09.30 |
申请号 |
US20100721461 |
申请日期 |
2010.03.10 |
申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES, S.A.;COMMISSARIAT A. L'ENERGIE ATOMIQUE |
发明人 |
ARENA CHANTAL;CLAVELIER LAURENT;RABAROT MARC |
分类号 |
H01L29/20;H01L21/302 |
主分类号 |
H01L29/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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