发明名称 Programmable resistance memory
摘要 A rewritable nonvolatile memory includes a test cell that is dedicated to testing the storage characteristics of other, similar, storage cells formed within the same integrated circuit memory. The test cell may be share the same structure and composition as storage cells and may be positioned proximate storage cells.
申请公布号 US2010244023(A1) 申请公布日期 2010.09.30
申请号 US20090383489 申请日期 2009.03.25
申请人 OVONYX , INC. 发明人 PARKINNSON WARD
分类号 H01L23/58;H01L21/66;H01L45/00 主分类号 H01L23/58
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