Leistungshalbleiterbauelement mit großflächigen Außenkontakten sowie Verfahren zur Herstellung desselben

摘要

The power semiconductor component has an insulation adhesion layer (11) or foil material that is arranged between a power semiconductor chip side (12) and a flat conductor material side (13). A power semiconductor chip (10), a source outer flat conductor (6), a gate outer flat conductor and the insulation adhesion layer are embedded in a plastic housing compound under release of outer contact surfaces (15) of a flat conductor material (8). An independent claim is also included for a method for manufacturing multiple power semiconductor components.