| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a solar cell capable of increasing the open voltage when compared with a conventional solar cells. <P>SOLUTION: This solar cell 2 has: a p-type semiconductor layer 8 containing a group Ib element, a group IIIb element, and a group VIb element; and an n-type semiconductor layer 10 containing a group Ib element, a group IIIb element, a group VIb element, and Zn and formed on the p-type semiconductor layer 8. A content of the group Ib element in the n-type semiconductor layer 10 is 15-21 at.% to the total number of atoms of the group Ib element, the group IIIb element, the group VIb element, and Zn in the n-type semiconductor layer 10, and a content of Zn in the n-type semiconductor layer 10 is 0.005-1.0 at.% to the total number of atoms of the group Ib element, the group IIIb element, the group VIb element, and Zn in the n-type semiconductor layer 10. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
