| 摘要 |
PROBLEM TO BE SOLVED: To provide a defect analysis method of a silicon single crystal, by which distribution of crystal defects in a silicon single crystal can be easily analyzed even in pulling a silicon single crystal by MCZ (Magnetic Czochralski) method in which a magnetic field is applied in a horizontal direction. SOLUTION: The method includes a step S2 of calculating convection in a crucible, where a convection of a silicon melt is calculated by a lamellar flow model using adjusted physical properties of the silicon melt. In the step, convection of the silicon melt is calculated on a plane having two-dimensional axial symmetry, the plane symmetric with respect to the rotation axis of the silicon single crystal. Thereby, the number of meshes is significantly reduced compared to a calculation by a conventional three-dimensional convection model. For example, convection of a silicon melt can be calculated in about one day even for a silicon single crystal having a diameter of about 310 mm. COPYRIGHT: (C)2010,JPO&INPIT |
