| 摘要 |
A semiconductor device including a first wire made of a material mainly composed of Cu, two second wires made of a material mainly composed of Cu, an interlayer dielectric film formed between the first wire and the two second wires, two vias made of a material mainly composed of Cu and each penetrating through the interlayer dielectric film and connecting the first wire and a respective one of the two second wires, and a dummy via formed between the two second wires. The dummy via is made of a material mainly composed of Cu, has a diameter smaller than a diameter of each of the two vias, and is connected to the first wire while not contributing to electrical connection between the first wire and the two second wires.
|
