发明名称 |
Self Forming Metal Fluoride Barriers for Fluorinated Low-K Dielectrics |
摘要 |
A device and method of forming fluoride metal barriers at an interface of a fluorinated low-K dielectric and Cu or Cu alloy interconnects is disclosed. The fluoride metal barriers may prevent interconnects from reacting with the fluorinated low-K dielectric. The method may include depositing a thin film of metal or metal alloy on the fluorinated low-K dielectric. The thin film may include a metal or metal alloying element that reacts with free fluorine and/or fluorine compounds from the fluorinated low-K dielectric to form fluoride metal barriers.
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申请公布号 |
US2010244252(A1) |
申请公布日期 |
2010.09.30 |
申请号 |
US20090416131 |
申请日期 |
2009.03.31 |
申请人 |
JEZEWSKI CHRISTOPHER J;ZIERATH DANIEL J;GSTREIN FLORIAN |
发明人 |
JEZEWSKI CHRISTOPHER J.;ZIERATH DANIEL J.;GSTREIN FLORIAN |
分类号 |
H01L23/538;H01L21/768 |
主分类号 |
H01L23/538 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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