发明名称 DEPOSITION OF HIGH VAPOR PRESSURE MATERIALS
摘要 The present invention provides deposition sources, systems, and related methods that can efficiently and controllably provide vaporized material for deposition of thin-film materials. The deposition sources, systems and related methods described herein can be used to deposit any desired material and are particularly useful for depositing high vapor pressure materials such as selenium in the manufacture of copper indium gallium diselenide based photovoltaic devices.
申请公布号 US2010248416(A1) 申请公布日期 2010.09.30
申请号 US20100730800 申请日期 2010.03.24
申请人 PRIDDY SCOTT WAYNE;CONROY CHAD MICHAEL 发明人 PRIDDY SCOTT WAYNE;CONROY CHAD MICHAEL
分类号 H01L31/18 主分类号 H01L31/18
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