<p>A switchable junction (600) with an intrinsic diode includes a first electrode (635) and second electrode (640). A first memristive matrix (605) forms an electrical interface (625) with the first electrode (635) which has a programmable conductance. A semiconductor matrix (615) is electrical contact with the first memristive matrix (605) and forms a rectifying diode interface (630) with the second electrode (640).</p>
申请公布号
WO2010110803(A1)
申请公布日期
2010.09.30
申请号
WO2009US38682
申请日期
2009.03.27
申请人
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.;YANG, JIANHUA;STRUKOV, DMITRI, BORISOVICH;WILLIAMS, R., STANLEY
发明人
YANG, JIANHUA;STRUKOV, DMITRI, BORISOVICH;WILLIAMS, R., STANLEY