发明名称 SWITCHABLE JUNCTION WITH INTRINSIC DIODE
摘要 <p>A switchable junction (600) with an intrinsic diode includes a first electrode (635) and second electrode (640). A first memristive matrix (605) forms an electrical interface (625) with the first electrode (635) which has a programmable conductance. A semiconductor matrix (615) is electrical contact with the first memristive matrix (605) and forms a rectifying diode interface (630) with the second electrode (640).</p>
申请公布号 WO2010110803(A1) 申请公布日期 2010.09.30
申请号 WO2009US38682 申请日期 2009.03.27
申请人 HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.;YANG, JIANHUA;STRUKOV, DMITRI, BORISOVICH;WILLIAMS, R., STANLEY 发明人 YANG, JIANHUA;STRUKOV, DMITRI, BORISOVICH;WILLIAMS, R., STANLEY
分类号 H01L29/861;H01L21/8247;H01L27/115;H01L29/40;H01L29/872 主分类号 H01L29/861
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