发明名称 |
IMAGE SENSOR AND METHOD OF FABRICATING SAME |
摘要 |
Provided is a method of fabricating an image sensor device. The method includes providing a device substrate having a front side and a back side. The method includes forming first and second radiation-sensing regions in the device substrate, the first and second radiation-sensing regions being separated by an isolation structure. The method also includes forming a transparent layer over the back side of the device substrate. The method further includes forming an opening in the transparent layer, the opening being aligned with the isolation structure. The method also includes filling the opening with an opaque material.
|
申请公布号 |
US2010244173(A1) |
申请公布日期 |
2010.09.30 |
申请号 |
US20090413752 |
申请日期 |
2009.03.30 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
WANG WEN-DE;YAUNG DUN-NIAN;LIU JEN-CHENG;CHUANG CHUN-CHIEH;LIN JENG-SHYAN |
分类号 |
H01L31/0216;H01L31/18 |
主分类号 |
H01L31/0216 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|