| 摘要 |
<p>The method comprises carrying out a substrate pre-treatment, in which a coating material (2) is deposited on the substrate (3) with a magnetron in pure inert gas atmosphere, where the substrate is at a negative bias, which is high, so that the coating material is partially implanted into the substrate. The negative bias is controlled during the substrate pre-treatment, so that a balance between the deposited and re-etched material is adjusted. The negative bias of the substrate is adjusted to -800 V to -1200 V during the substrate pre-treatment. The method comprises carrying out a substrate pre-treatment, in which a coating material (2) is deposited on the substrate (3) with a magnetron in pure inert gas atmosphere, where the substrate is at a negative bias, which is high, so that the coating material is partially implanted into the substrate. The negative bias is controlled during the substrate pre-treatment, so that a balance between the deposited and re-etched material is adjusted. The negative bias of the substrate is adjusted to -800 V to -1200 V during the substrate pre-treatment. Before the substrate pre-treatment, a substrate cleaning is carried out, in which the coating material is sputtered on the substrate with the magnetron in pure inert gas atmosphere, where the substrate is at negative bias, which is high, so that a removal of the substrate material adjusts itself in spite of coating. The negative bias of the substrate is adjusted to -1500 V during the substrate cleaning, and is reduced to an amount of less than 400V at the end of the substrate cleaning. The negative bias of the substrate is reduced to -50 V to -200 V for a layer construction on the substrate. The bias reduction takes place continuously or in steps of 100 V up to 200 V. The substrate pre-treatment takes place with chromium, titanium, titanium aluminide, zirconium, vanadium, niobium, tantalum, tungsten or tungsten carbide. For the substrate pre-treatment and the layer construction, a combination of the different coating materials is used. The reactive hard material layer is deposited on the substrate for the layer construction. For the layer construction on the substrate, carbon from a highly-pure graphite target is deposited in a weak reactive atmosphere containing argon and ethyne or argon and nitrogen, where a super-hard ta-carbon (C)-layer, tantalum-C:hydrogen (H) layer or a-C:H layer grows up on the substrate. The gas flow of the reactive gases is adjusted to 1-20% of the argon flow. For the layer construction on the substrate, the deposition of the carbon takes place in the atmosphere with a mixture of argon and neon and in pure neon atmosphere.</p> |
