| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device in which a period of writing data to a selected memory cell being a write object can be sufficiently made long. SOLUTION: The semiconductor memory device includes: memory cells; a word line; first and second bit lines, first and second sense nodes; a first transfer gate between the first bit line and the first sense node; a second transfer gate between the second bit line and the second transfer node; a latch circuit latching data in the first and the second sense nodes; and first and second data lines transmitting the data. Before the first and the second transfer gates are made into a conduction state, write data are transferred from the first and the second data lines to the first and the second sense nodes during write, and when the first and the second transfer gates are made into the conduction state, writing of write data of the first and the second sense nodes to the selected memory cell is started. COPYRIGHT: (C)2010,JPO&INPIT
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