| 摘要 |
High-side and low-side surface voltage sustaining regions is produced by utilizing optimum surface variation lateral doping. Schottky junctions are formed by depositing metal M on an n-type region having the lowest potential, taking M as the anode AL or AH of the Schottky diode, and ohmic contact is formed at the portion having the highest potential, which is taken as the cathode KL or KH of the Schottky diode. Where said potentials refer to a reverse bias is applied to the Schottky diode. A small isolation region is formed between two surface voltage sustaining regions. Each voltage sustaining region can be divided into several sections. Isolation region are inserted between neighbouring sections. A Schottky diode is formed in each section. Schottky diode of each section is connected to each other in series. A lateral Schottky diode and an n-MOST can be formed within a single voltage sustaining region. The source region is connected to the anode of the Schottky junction directly and the drain region is connected to the cathode of the Schottky junction directly.
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