| 摘要 |
A group III nitride semiconductor composite substrate includes a substrate composed of a conductive material having a melting point of not less than 100° C., a group III nitride layer provided on the substrate, and a group III nitride single crystal film provided on the group III nitride layer. The group III nitride layer includes an undulation including a periodic roughness in a surface of the group III nitride layer contacted with the group III nitride single crystal film. The undulation includes a 1-dimensional power spectral density of less than 500 nm3 in the spatial wavelength region of not less than 0.1 (/μm) and less than 1 (/μm).
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