发明名称 |
COMPOSITION, METHOD AND PROCESS FOR POLISHING A WAFER |
摘要 |
A composition for use in polishing a wafer is disclosed. The composition includes an aqueous solution of initial components substantially free of loose abrasive particles and having a pH in the range of about 2 to 7, the aqueous solution including at least one polyelectrolyte and a surfactant. In certain embodiments, the wafer polishing composition can be adjusted to control cut rate and selectivity for modifying semiconductor wafers using a fixed abrasive Chemical Mechanical Polishing (CMP) process. Also disclosed is a CMP method and a process for polishing a wafer using the polishing composition.
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申请公布号 |
US2010243471(A1) |
申请公布日期 |
2010.09.30 |
申请号 |
US20080739804 |
申请日期 |
2008.08.25 |
申请人 |
3M INNOVATIVE PROPERTIES COMPANY |
发明人 |
LI NAICHAO;GAGLIARDI JOHN J.;CLARK PHILIP G.;SAVU PATRICIA M. |
分类号 |
C09K13/00;C25F3/30;H01L21/302 |
主分类号 |
C09K13/00 |
代理机构 |
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代理人 |
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地址 |
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