发明名称 COMPOSITION, METHOD AND PROCESS FOR POLISHING A WAFER
摘要 A composition for use in polishing a wafer is disclosed. The composition includes an aqueous solution of initial components substantially free of loose abrasive particles and having a pH in the range of about 2 to 7, the aqueous solution including at least one polyelectrolyte and a surfactant. In certain embodiments, the wafer polishing composition can be adjusted to control cut rate and selectivity for modifying semiconductor wafers using a fixed abrasive Chemical Mechanical Polishing (CMP) process. Also disclosed is a CMP method and a process for polishing a wafer using the polishing composition.
申请公布号 US2010243471(A1) 申请公布日期 2010.09.30
申请号 US20080739804 申请日期 2008.08.25
申请人 3M INNOVATIVE PROPERTIES COMPANY 发明人 LI NAICHAO;GAGLIARDI JOHN J.;CLARK PHILIP G.;SAVU PATRICIA M.
分类号 C09K13/00;C25F3/30;H01L21/302 主分类号 C09K13/00
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