| 摘要 |
A device is provided wherein a traditional EEPROM device is emulated by using two or more pages of block-erasable memory and mapping each traditional EEPROM write instruction to an incremented active data sector in a first page of the block-erasable memory while a second page of the block-erasable memory is being partially or fully erased. Then, when the first page of block-erasable memory has had its plurality of data sectors written, changing the active page to the second block-erasable memory and mapping traditional EEPROM writes to incremented data sectors therein while the previously written block-erasable memory is being partially or fully erased.
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