ELECTRON BEAM LITHOGRAPHY SYSTEM AND ELECTRON BEAM LITHOGRAPHING METHOD

摘要

Provided is an electron beam lithography system that can adjust the shape and/or deflection stabilization waiting time of an electron beam in accordance with the significance of a device pattern to perform a high-speed, highly precise lithography. The electron beam lithography system comprises a storing part that stores data of lithography patterns to which ranks in accordance with precisions required by device patterns have been added; a lithography pattern adjusting part that generates the data of divided lithography patterns according to a rank; a stabilization waiting time adjusting part that decides a stabilization waiting time in accordance with a rank; and a control part that lithographs a device pattern, while irradiating the electron beam in accordance with the data of divided lithography patterns and the stabilization waiting time. The lithography pattern adjusting part decides, based on the rank, an upper limit value of the sizes of the longer sides of the divided lithography patterns or an upper limit value of the areas of the divided lithography patterns to divide the lithography pattern into the divided lithography patterns in accordance with the decided upper limit value.